论文部分内容阅读
采用解析分析的方法．开发了ＶＤＭＯＳ和ＩＧＢＴ的稳态解析模拟软件．它可模拟与ＶＤＭＯＳ和ＩＧＢＴ的几何结构、掺杂分布相关的直流特性。本文介绍了模拟所采用的物理模型和模拟技术，并得到了优化结论，给出了部分模拟结果和实验结果。
Using analytical methods. Developed the steady-state analytic simulation software of VDMOS and IGBT. It simulates the DC characteristics associated with the geometry and doping profiles of VDMOS and IGBTs. In this paper, we introduce the physical model and simulation technique used in simulation, and get the conclusion of optimization. Some simulation results and experimental results are given.