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GaAs MESFET的分析模型虽然能得出FET应用的许多基本特征,但不能分析诸如陷阱,衬底导电、由碰撞电离(雪崩)造成的载流子倍增,二维几何特征(例如凹槽)等的二维物理机制。分析这些特征的模型只能用二维数值模拟精确描述。然而二维数值模拟计算量大,成本高,使传统的串行机负担过重。应用当代超级处理机大规模并行计算机,例如联结机CM—2可以解决这些问题。本文目的在于介绍应用CM-2对MESFET进行模拟的探索性研究,并将给出特定器件在活动区域内工作过程的彩色显示,以说明这种计算机在FET建模和特征研究方面的能力。
Analytical models of GaAs MESFETs can not analyze many fundamental features of FET applications but can not analyze such issues as traps, substrate conductivity, carrier multiplication by impact ionization (avalanche), two-dimensional geometric features (such as grooves), etc. Two-dimensional physical mechanism. Models that analyze these features can only be accurately described using two-dimensional numerical simulations. However, two-dimensional numerical simulation is computationally expensive and costly, overloading traditional serial machines. Applying modern supercomputers to large-scale parallel computers, such as the Linking Machine CM-2, can solve these problems. The purpose of this paper is to introduce an exploratory study of the MESFET using CM-2 and to give a color display of the operation of a particular device in the active region to illustrate the computer’s capabilities in FET modeling and characterization.