【摘 要】
：
Al0.85In0.15N/AlN/GaN metal-oxide-semiconductor high electron mobility transistors(MOS-HEMTs)employing a 3-nm ultra-thin atomic-layer deposited(ALD)Al2O3 gate d
【机 构】
：
Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Xidian Univer
论文部分内容阅读
Al0.85In0.15N/AlN/GaN metal-oxide-semiconductor high electron mobility transistors(MOS-HEMTs)employing a 3-nm ultra-thin atomic-layer deposited(ALD)Al2O3 gate dielectric layer are reported.Devices with 0.6μm gate lengths exhibit an improved maximum drain current density of 1227mA/mm at a gate bias of 3 V,a peak transconductance of 328 mS/mm,a cutoff frequency fT of 16 GHz,a maximum frequency of oscillation fmax of45 GHz,as well as significant gate leakage suppression in both reverse and forward directions,compared with the conventional Al0.85In0.15N/AlN/GaN HEMT.Negligible C-V hysteresis,together with a smaller pinch-off voltage shift,is observed,demonstrating few bulk traps in the dielectric and high quality of the Al2O3/AlInN interface.It is most notable that not only the transconductance profile of the MOS-HEMT is almost the same as that of the conventional HEMT with a negative shift,but also the peak transconductance of the MOS-HEMT is increased slightly.It is an exciting improvement in the transconductance performance.
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