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本文从器件物理出发结合黑箱方法得到了一个MOSFET的简单的三端器件模型,同时提出了将衬底偏置效应方便地结合进去从而构成四端器件模型的方法.对于模型参数的萃取须作的测量及有关计算方法作了介绍.编制了自动确定参数的计算机程序.参数萃取所需的测量工作量很少.经实际模拟值与实验值比较,表明本模型在精度与简单性方面有良好的兼顾.
In this paper, we get a MOSFET simple three-terminal device model from the physics of the device and the black box method, and put forward the method of combining the substrate bias effect to form the four-terminal device model. Measurement and related calculation methods were introduced.A computer program was established to automatically determine the parameters.Measurement of the parameters required for the extraction of the measurement is very small.Through the actual simulation and experimental results show that the model has good accuracy and simplicity Take into account.