集成电路的发展要求制备出超浅结或超薄有源层，以满足器件高密度和高速度的要求，低能离子注入是形成浅结的最有效手段，本文介绍了低能离子注入硅和ＧａＡｓ衬底中形成０．１μｍ以下的硅超浅结和ＧａＡｓ超薄有源层，以及它们在一－些器件上应用的结果。 The development of integrated circuits requires the fabrication of ultra-shallow junctions or ultrathin active layers to meet the requirements of high density and high speed of devices. Low energy ion implantation is the most effective way to form shallow junctions. This paper introduces the low energy ion implanted silicon and GaAs interlayers The bottom of the silicon to form ultra-shallow 0.1μm and GaAs ultra-thin active layer, and their application in a few devices results.