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以深刻蚀和热氧化工艺为基础 ,提出了一种新的阵列波导光栅 (AWG)制备技术 .这一工艺可使 AWG中的波导侧向留有一硅层 .采用有限元法和有限差分束传播法分别计算了存在这一硅层时的波导应力分布和有效折射率 .结果表明由于这一侧向硅层的存在 ,使 AWG中波导在水平和垂直方向的应力趋于一致 ,AWG的偏振相关波长明显减小
Based on the deep etching and thermal oxidation process, a new fabrication technology of arrayed waveguide grating (AWG) is proposed, which can leave a silicon layer lateral to the waveguide in the AWG. The finite element method and the finite difference beam propagation Method were used to calculate the waveguide stress distribution and the effective refractive index in the presence of this silicon layer respectively.The results show that due to the existence of this lateral silicon layer, the horizontal and vertical stress of AWG waveguide tend to be consistent and the polarization correlation of AWG Wavelength decreased significantly