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本文描述了室温无磁场条件下,电子束在亚微米砷化镓器件中的输运特性,得到了放大增益。从而表明了利用亚微米器件放大毫米波是可行的。
This paper describes the transport properties of electron beams in submicron GaAs devices under non-magnetic field conditions at room temperature, and gains amplification gain. This shows that the use of sub-micron devices to amplify millimeter-wave is feasible.