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为了进一步洞悉高分子薄膜自组织机理和高分子有机场效应晶体管(OFET)载流子迁移率之间的直接关联性,本工作采用先进的同步辐射掠入射X射线衍射(GIXRD)技术,研究了高分子OFET中高分子半导体高度区域规则的聚(3-己基噻吩)(RR-P3HT)工作层薄膜,由不同退火温度所导致的薄膜自组织微观结构的变化.GIXRD测试实验结果显示了,对于不同高分子薄膜制备方法(旋涂法及滴膜法)及不同溶液浓度(RR-P3HT溶液浓度为2.5mg/ml及3.5mg/ml)制备的RR-P3HT有机半导体工作层,在氮气气氛下,经过150℃热退火后,形成的噻吩环面垂直于基底,π-π堆积方向平行于衬底二维微晶粒薄片结构较多,微晶粒薄片的晶粒结构较好,有利于载流子的传输.GIXRD测试实验结果也验证了,一个合适的退火处理,将更有利于这个自组织过程中“edge-on”的微晶粒薄片结构的形成,结果将导致高分子OFET中场效应迁移率的提高.
In order to further understand the direct correlation between the self-organizing mechanism of polymer films and the carrier mobility of polymer organic field-effect transistors (OFETs), this work uses advanced synchrotron radiation grazing incidence X-ray diffraction (GIXRD) (OF-3-hexylthiophene) (RR-P3HT) working layer film with high degree of regularity of high molecular semiconductors in polymer OFET. The results of GIXRD test show that for different RR-P3HT organic semiconductor working layer prepared by the method of polymer film (spin-coating method and dripping-film method) and different solution concentration (RR-P3HT solution concentration of 2.5mg / ml and 3.5mg / ml) After thermal annealing at 150 ℃, the thiophene ring formed perpendicular to the substrate, π-π stacking direction parallel to the substrate two-dimensional micro-crystalline sheet structure is more, the fine grain structure of the micro-crystalline sheet is conducive to current-carrying The results of GIXRD test also verified that a proper annealing treatment would be more conducive to the formation of the “edge-on” microcrystalline platelet structure in the self-organized process, which will result in the formation of polymer OFET Field effect mobility High.