论文部分内容阅读
在没有表面腐蚀的Zn气氛下,以碘作为输运气体,将Al蒸汽扩散到ZnTe内,得到了高电阻率(300°K时为10~(11)～10~(12)Ωcm)层。用这种方法制备了雪崩MIS场致发光二极管。二极管的光谱,在300°K时是黄色,在77°K时是绿色或黄绿色。黄色的外部量子效率为0.1～0.2％,绿色为10％,黄绿色为20％。黄色和绿色场致发光的出现是由于双倍离化的Zn空位和一个未知的施主组成的受主-施主对,因此黄绿色是掺Al ZnTe的特征。
In the case of Zn without surface corrosion, Al vapor was diffused into ZnTe with iodine as transport gas to obtain high resistivity (10 ~ (11) ~ 10 ~ (12) Ωcm) layer at 300 ° K. In this way, an avalanche MIS electroluminescent diode was fabricated. The diode spectrum is yellow at 300 ° K and green or yellow-green at 77 ° K. The external quantum efficiency of yellow is 0.1 to 0.2%, green is 10%, and yellow-green is 20%. The appearance of yellow and green electroluminescence is due to the double ionized Zn vacancy and an acceptor-donor pair composed of an unknown donor, so yellow-green is a feature of Al-ZnTe-doped.