论文部分内容阅读
利用直流磁控反应溅射钢锡合金靶和锌铝合金靶，在软基片上低温沉积了Ｉｎ２Ｏ３：Ｓｎ（ＩＴＯ）和ＺｎＯ：Ａｌ（ＺＡＯ）透明导电薄膜．结果表明，ＩＴＯ和ＺＡＯ薄膜均出现晶格畸变：柔性基片上低温沉积薄膜的电阻率对氧分压的依赖性远低于硅和玻璃衬底；尺度效应对薄膜电阻率有重要的影响实验测得ＩＴＯ薄膜在６０ｎｍ厚时获得最低电阻率为４．２３×１０－４·ｃｍ，ＺＡＯ薄膜在２０ｎｍ厚时获得最低电阻率为８．０９×１０－４·ｃｍ．无论ＩＴＯ或是ＺＡＯ，其可见光区的平均透射率均大于７５％基于薄膜吸收系数的研究表明，ＩＴＯ薄膜的光学直接能隙在３．６５－４．００ｅＶ之间，间接跃迁在２．５０—２７５ｅＶ之间ＺＺＡＯ薄膜的光学直接能隙在３．２０—３；６０ｅＶ之间，间接跃迁在２５０—２．７５ｅＶ之间
The In2O3: Sn (ITO) and ZnO: Al (ZAO) transparent conductive films were deposited on a soft substrate by DC magnetron reactive sputtering of Sn-Al alloy target and Zn-Al alloy target. The results show that lattice distortion occurs in both ITO and ZAO thin films: the dependence of resistivity of low temperature deposited films on the oxygen partial pressure is much lower than that on silicon and glass substrates; and the scale effect has an important effect on the resistivity of thin films The lowest resistivity of ITO film at 60nm was 4.23 × 10-4 · cm and the lowest resistivity of ZAO film at 20nm was 8.09 × 10-4 · cm. Both ITO and ZAO have an average transmittance of more than 75% in the visible region. Studies based on the absorption coefficients of the films show that the direct optical energy gap of the ITO film is between 3.65-4.00eV and the indirect transition is between 2.50- The optical direct energy gap of ZZAO films between 275eV and 3.20-3; 60eV, the indirect transition between 250-2.75eV