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中国科学院上海硅酸盐研究所与半导体研究所通过联合攻关,在SiC-LED技术路线方面中涉及的核心技术,如SiC单晶底、外延、芯片和灯具封装等方面取得了突破性进展,研制出了多种结构的SiC-LED,并封装成了灯具,完全打通了SiC-LED技术路线,为SiC-LED技术在半导体照明产业领域的推广打下了基础。半导体照明是一种基于LED的新型光源的固态照明,衬底材料是半导体照明产业技术发展的基础,不同的衬底材料决定了LED外延生长技术、芯片加工技术和器件封装技术因此衬底材料决定了半导体照明技术的发展路线目
Chinese Academy of Sciences, Shanghai Institute of Ceramics and Semiconductor Institute through joint research, in the SiC-LED technology route involved in the core technologies such as SiC single crystal bottom, epitaxy, chip and lamp package made a breakthrough, developed A variety of structure of the SiC-LED, and packaged into a lamp, completely opened up the SiC-LED technology route for the SiC-LED technology in the semiconductor lighting industry to lay the foundation for the promotion. Semiconductor lighting is a solid-state lighting based on a new LED-based light source. Substrate material is the basis for the technological development of semiconductor lighting industry. Different substrate materials determine LED epitaxial growth technology, chip processing technology and device packaging technology. Therefore, the substrate material determines The semiconductor lighting technology development path