【摘 要】
：
分别使用反应溅射Al+α-Al2O3(15％ α-Al2O3,质量分数)复合靶和在金箔基体表面预植α-Al2O3籽晶,促进α-Al2O3薄膜的低温沉积.使用扫描电子显微镜(SEM)、掠入射X射线衍射(GIXRD)和能谱仪(EDS)等方法表征薄膜样品的表面形貌、相结构和元素组成.结果 表明,在射频反应溅射Al+α-Al2O3复合靶、沉积温度为560℃条件下能在Si(100)基体上沉积出化学计量比的单相α-Al2O3薄膜;使用射频反应溅射A1靶、沉积温度为500℃条件下能在预植α-Al2O3籽晶(籽晶密度为1
【机 构】
：
华南理工大学材料科学与工程学院 广州510640
论文部分内容阅读
分别使用反应溅射Al+α-Al2O3(15％ α-Al2O3,质量分数)复合靶和在金箔基体表面预植α-Al2O3籽晶,促进α-Al2O3薄膜的低温沉积.使用扫描电子显微镜(SEM)、掠入射X射线衍射(GIXRD)和能谱仪(EDS)等方法表征薄膜样品的表面形貌、相结构和元素组成.结果 表明,在射频反应溅射Al+α-Al2O3复合靶、沉积温度为560℃条件下能在Si(100)基体上沉积出化学计量比的单相α-Al2O3薄膜;使用射频反应溅射A1靶、沉积温度为500℃条件下能在预植α-Al2O3籽晶(籽晶密度为106/cm2)的金箔表面沉积出化学计量比的单相α-Al2O3薄膜.两种研究方案的结果均表明,α-Al2O3籽晶能促进低温沉积单相α-Al2O3薄膜.
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