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A numerical model of multilayer organic light-emitting devices is presented in this article. This model is based on the drift-diffusion equations which include charge injection, transport, space charge effects, trapping, heterojunction interface and recombination process. The device structure in the simulation is ITO/CuPc (20 nm)/NPD (40 nm)/Alq3 (60 nm)/LiF/Al. There are two heterojunctions which should be dealt with in the simulation. The I-V characteristics, carrier distribution and recombination rate of a device are calculated. The simulation results and measured data are in good agreement.
A numerical model of multilayer organic light-emitting devices is presented in this article. This device is based on the drift-diffusion equations which include charge injection, transport, space charge effects, trapping, heterojunction interface and recombination process. The device structure in the Simulation of is ITO / CuPc (20 nm) / NPD (40 nm) / Alq3 (60 nm) / LiF / Al. There are two heterojunctions which should deal with with the simulation. The IV characteristics, carrier distribution and recombination rate of a device are calculated. The simulation results and measured data are in good agreement.