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从电性和结构上论证了纳米硅薄膜中的细微晶粒(3～6 nm)具有量子点(Q.D)特征。在其电导曲线中呈现出随晶粒尺寸减而增大的小尺寸效应。使用薄层(～20nm厚)纳米硅膜制成了隧道二极管,已在液氮温区(≈77K)在其Ⅰ-Ⅴ及(?)-Ⅴ曲线上呈现出Coulomb台阶。对实验结果做了初步分析讨论。
Electrically and structurally demonstrated that the fine grains (3 ~ 6 nm) in nanostructured silicon films have the characteristic of quantum dots (Q.D). In its conductance curve shows the size of the grain increases with the small size effect. Tunnel diodes have been fabricated using thin (~ 20 nm thick) nanosilica films and have been characterized by Coulomb steps on their Ⅰ-Ⅴ and (∇) -V curves in the liquid nitrogen temperature region (≈77K). The experimental results made a preliminary analysis and discussion.