本文通过对光导红外探测器的基本理论进行分析，给出了获得高性能红外探测器应具备的晶片参数和工艺设计的理论依据。实践证明，在此理论指导下开展长波线列光导器件研制，能重复制备出昏性能、高均命性的３２元、４８元和６０元红外探测器，其Ｄ￣＊＿ｂ＞１×１０￣（１０）ｃｍＨｚ￣（１／２）Ｗ￣（－１）、Ｒ＿Ｖ＞１×１０￣４ＶＷ￣（－１）、λ＿ｐ＞１１μｍ和λ＿ｃ＞１２μｍ。 Based on the analysis of the basic theory of the photoconductive infrared detector, the theoretical basis of obtaining the wafer parameters and process design for the high performance infrared detector is given. Practice has proved that under the guidance of this theory to carry out the development of long-wave line photoconductive devices can be repeatedly prepared dizzy performance, high life of the 32 yuan, 48 yuan and 60 yuan infrared detector, the D * * _b> 1 × 10 ~ (10) cmHz ~ (1/2) W ~ (-1), R_V> 1 × 10 ~ 4VW ~ (-1), λ_p> 11μm and λ_c> 12μm.