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利用具备亚微米量级空间分辨率和纳秒级时间分辨率的热反射测温技术对工作在脉冲偏置条件下的CGH4006P型Ga N HEMT进行了瞬态温度检测。测量了Ga N器件表面栅极、漏极和源极金属各部位在20μs内的瞬态温度幅度、分布及变化速度等数据。栅极、漏极和源极的温度幅度有着非常明显的差距,器件表面以栅为中心呈现较大的温度分布梯度。器件表面栅金属温度变化幅度最高、变化速度最快,其主要温度变化发生在5μs之内。经过仔细分析,器件各部位温度差异的主要原因是器件的传热方向、不同区域与发热点的距离。
A transient temperature measurement of CGH4006P Ga N HEMT operating under pulsed bias conditions was performed using thermal reflection temperature measurement with sub-micron spatial resolution and nanosecond time resolution. The transient temperature amplitudes, distributions, and rate of change of the gate, drain and source metal parts of Ga N devices over 20 μs were measured. The temperature range of the gate, drain and source has a very significant difference. The surface of the device shows a large temperature distribution gradient centered on the gate. Gate device metal surface temperature changes the highest rate of change the fastest, the main temperature changes occur within 5μs. After careful analysis, the main reason for the temperature difference between the various parts of the device is the heat transfer direction of the device, the distance between different regions and the hot spots.