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用弧离子增强反应磁控溅射方法,在高速钢(W18Cr4V)基体上沉积出具有较高Al,Si含量的TiAlSiN多元硬质薄膜,研究了不同温度退火后薄膜的微观结构和硬度变化.结果表明:由于沉积速率较高和沉积温度较低,沉积态的TiAlSiN薄膜主要形成非晶结构;高温退火后,TiAlSiN薄膜由非晶转变为纳米晶/非晶复合结构;1000℃以下退火后产生的晶体为AlN及TiN;1100℃以上退火后晶体为TiN,其余为非晶结构;1200℃时薄膜发生氧化,生成Al2O3,表明TiAlSiN薄膜具有相当高的抗氧化温度.TiAlSiN薄膜随退火温度升高晶粒尺寸逐渐增大,高温退火后平均晶粒尺寸小于30nm.沉积态TiAlSiN薄膜具有较高的显微硬度(HV0.2N=3300),但随退火温度的升高,硬度逐渐降低,800℃退火后硬度降低至接近TiN硬度值(HV0.2N=2300).
The arc-enhanced reactive magnetron sputtering method was used to deposit TiAlSiN hard coatings with high Al and Si contents on the high-speed steel (W18Cr4V) substrate. The microstructures and hardness of the films after annealing at different temperatures were investigated. Results The results show that the as-deposited TiAlSiN films mainly have an amorphous structure due to the high deposition rate and low deposition temperature. After annealing at high temperature, the TiAlSiN films transform from amorphous to nanocrystalline / amorphous composite structures. After annealing at 1000 ℃, The crystal is AlN and TiN, the crystal is TiN after annealing at 1100 ℃, and the rest is amorphous.The film is oxidized at 1200 ℃ to form Al2O3, indicating that the TiAlSiN film has a relatively high oxidation resistance.The TiAlSiN thin film increases with the annealing temperature The grain size increases gradually and the average grain size after high temperature annealing is less than 30nm. The as-deposited TiAlSiN film has higher microhardness (HV0.2N = 3300), but with the increase of annealing temperature, the hardness decreases gradually and annealed at 800 ℃ After the hardness decreased to near TiN hardness value (HV0.2N = 2300).