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日本Disco公司日前开发出了一种新型生产设备,可利用等离子干蚀刻,减轻超薄晶圆产生的应力。在IC卡等产品上封装芯片时,即使受到外部作用力也不会遭到破坏,可提高产品的可靠性。该设备主要用于利用DBG(Dicing Before Grinding,先切割再研磨)工艺对硅晶圆进行研磨等工艺过程。DBG就是指先从硅晶圆表面至中间切出切口,然后再从硅晶圆背面进行研磨,完成切割。此后利用等离子干蚀刻工艺,消除研磨面及切割面的不规则性。据称,该设备还具有平整和洗净硅晶圆表面的作用。由此就能降低在硅晶圆背面形成电极时的欧姆电阻。
Japan’s Disco company has developed a new type of production equipment, the use of plasma dry etching, reduce the stress generated by ultra-thin wafers. In IC cards and other products on the chip package, even if subjected to external forces will not be destroyed, can improve product reliability. The device is mainly used for the use of DBG (Dicing Before Grinding, cutting and then grinding) process on the silicon wafer grinding process. DBG refers to the first cut from the surface of the silicon wafer to the incision, and then from the back of the silicon wafer grinding to complete the cut. After that, the plasma dry etching process was adopted to eliminate the irregularities of the grinding surface and the cutting surface. Allegedly, the device also has the role of surface formation and cleaning of silicon wafers. As a result, the ohmic resistance when the electrode is formed on the back surface of the silicon wafer can be reduced.