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利用电感耦合等离子体CVD方法在 35 0℃的低温下在镀Al玻璃衬底上制备出具有良好结晶性的Si薄膜 .利用x射线衍射、紫外 可见分光椭圆偏振谱、原子力显微镜及x射线光电子谱等研究了薄膜的结构、表面形貌和成分分布等 .结果表明 ,用这种方法制备的Si薄膜不但晶化程度高 ,而且具有良好的 ( 111)结晶取向性 ,晶粒尺寸大于30 0nm ,样品中无Al的残留 .结合电感耦合等离子体的高电子密度特征讨论了低温生长过程中Al诱导Si薄膜晶化的机理 .
Si films with good crystallinity were prepared on Al-coated Al-glass substrates by inductively coupled plasma CVD at low temperature of 350 ° C. The X-ray diffraction, UV-Vis spectroscopy, atomic force microscopy and X-ray photoelectron spectroscopy Etc. The results show that the Si film prepared by this method not only has a high degree of crystallization but also has a good (111) crystal orientation with a grain size of more than 300 nm, There is no residual Al in the sample.Based on the high electron density of inductively coupled plasma, the mechanism of Al induced Si thin film crystallization during low temperature growth is discussed.