本文从砷化镓肖特基势垒场效应晶体管(GaAsMESFET)大信号模型出发,采用谐波平衡法书出稳态解,获得了大信号S参数。所开发的软件可同时获得大小信号S参数,并在同一Smith圆图上显示出来,也可进行增益压缩等特性的分析。该软件已和参数提取、电路分析软件串成一体实现了从GaAs材料器件物理参数出发直接设计出微波单片集成电路(MMIC)的新思路。 Based on the large signal model of gallium arsenide Schottky barrier field effect transistor (GaAsMESFET), the steady-state solution is obtained by the harmonic balance method and the large-signal S-parameter is obtained. The developed software can obtain the S signal of the size signal at the same time, and display on the same Smith chart, can also carry on the characteristic analysis such as gain compression. The software has been integrated with parameter extraction and circuit analysis software to realize the new idea of ​​designing microwave monolithic integrated circuit (MMIC) directly from the physical parameters of GaAs material devices.