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本文分析了在生长Ⅲ－Ⅴ族半导体时ＭＯＣＶＤ系统中反应气体的输运过程，认为进入反应室的Ⅲ族元素有机金属反应气体的数量是与ＭＯＣＶＤ管道系统的结构以及反应气体的扩散系数有关的，并从理论上导出了计算公式．由于ＭＯＣＶＤ系统中Ⅲ族元素反应气体的输运特点，实际的Ⅴ／Ⅲ比通小于根据目前方法所计算出的数值．此结果不仅说明生长时的Ⅴ／Ⅲ比高于固态组份比的一种原因，同时也可以解释为什么在生长同种材料时，不同研究者所报导的Ⅴ／Ⅲ比不同．这一结果有利于找出生长时的Ⅴ／Ⅲ比与固态组份间的确定关系．
In this paper, the transport process of reactive gases in the MOCVD system during the growth of group III-V semiconductors is analyzed. It is considered that the number of group III organometallic reaction gases entering the reaction chamber is related to the structure of the MOCVD piping system and the diffusion coefficient of the reaction gas , And theoretically derived the formula. Due to the transport characteristics of group III reactant gases in the MOCVD system, the actual V / III ratio is less than the values calculated for the current method. This result not only shows a reason why the V / III ratio at the time of growth is higher than that of the solid component, but also explains why V / III ratios reported by different researchers are different when the same material is grown. This result is helpful to find out the relationship between Ⅴ / Ⅲ ratio and solid component during growth.