论文部分内容阅读
氮化钽薄膜作为混合集成电路重要的电阻材料广泛受到人们的重视和应用。我们采用直流平面磁控反应溅射工艺制得氮化钽薄膜,实验研究了溅射过程中氮分压P_(N_2)与沉积所得的含氮钽薄膜的结晶相结构和薄膜电阻率ρ、电阻温度系数TCR之间的关系。发现
Tantalum nitride thin film as a hybrid integrated circuit resistance material has been widely valued and applied. In this paper, the tantalum nitride thin films were prepared by direct current planar magnetron reactive sputtering. The crystallization phase structure and the film resistivity ρ of the nitrogen-containing tantalum films deposited by the nitrogen partial pressure P_ (N_2) and the resistance The relationship between the temperature coefficient TCR. Find