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Ion-implantation layers are fabricated by multiple nitrogen ion-implantations (3 times for sample A and 4 times for sample B) into a p-type 4H-SiC epitaxial layer. The implantation depth profiles are calculated by using the Monte Carlo simulator TRIM. The fabrication process and the I-V and C-V characteristics of the lateral Ti/4H-SiC Schottky barrier diodes (SBDs) fabricated on these multiple box-like ion-implantation layers are presented in detail. Measurements of the reverse I-V characteristics demonstrate a low reverse current, which is good enough for many SiC-based devices such as SiC metal-semiconductor field-effect transistors (MESFETs), and SiC static induction transistors (SITs). The parameters of the diodes are extracted from the forward I-V and C-V characteristics. The values of ideality factor n of SBDs for samples A and B are 3.0 and 3.5 respectively, and the values of series resistance R s are 11.9 and 1.0 k respectively. The values of barrier height B of Ti/4H-SiC are 0.95 and 0.72 eV obtained by the I-V method and 1.14 and 0.93 eV obtained by the C-V method for samples A and B respectively. The activation rates for the implanted nitrogen ions of samples A and B are 2% and 4% respectively extracted from C-V testing results.
Ion-implantation layers are fabricated by multiple nitrogen ion-implantations (3 times for sample A and 4 times for sample B) into a p-type 4H-SiC epitaxial layer. The implantation depth profiles are calculated by using the Monte Carlo simulator TRIM. The fabrication process and the IV and CV characteristics of the lateral Ti / 4H-SiC Schottky barrier diodes (SBDs) fabricated on these multiple box-like ion-implantation layers are presented in detail. Measurements of the reverse IV characteristics demonstrate a low reverse current , which is good enough for many SiC-based devices such as SiC metal-semiconductor field-effect transistors (MESFETs), and SiC static induction transistors (SITs). The parameters of the diodes are extracted from the forward IV and CV characteristics. values of ideality factor n of SBDs for samples A and B are 3.0 and 3.5 respectively, and the values of series resistance R s are 11.9 and 1.0 k respectively. The values of barrier height B of Ti / 4H-SiC are 0 .95 and 0.72 eV obtained by the IV method and 1.14 and 0.93 eV obtained by the CV method for samples A and B respectively. The activation rates for the implanted nitrogen ions samples A and B are 2% and 4% respectively extracted from CV testing results.