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在国产分子束外延设备的基础上 ,利用新型三温区阀控裂解源炉 ,对 In P及 In Ga As P材料的全固源分子束外延 (SSMBE)生长进行了研究。生长了高质量的 In P外延层 ,表面缺陷密度为 65cm- 2 ,非故意掺杂电子浓度约为 1× 1 0 16cm- 3.In P外延层的表面形貌、生长速率及 p型掺杂特性与生长温度密切相关 .研究了 In Ga As P外延材料的组分特性 ,发现在一定温度范围内生长温度对 族原子的吸附系数有较大影响 .最后得到了晶格匹配的 In0 .56Ga0 .4 4 As0 .94 P0 .0 6材料 ,低温光致发光谱峰位于 1 50 7nm,FWHM为 9.8me V.
Based on the domestic molecular beam epitaxy equipment, the whole solid source molecular beam epitaxy (SSMBE) growth of In P and In Ga As P materials was studied by using the new three temperature zone valve controlled cracking source furnace. A high quality In P epitaxial layer was grown with a surface defect density of 65 cm-2 and an unintentionally doped electron concentration of about 1 × 10 16 cm -3. The surface morphology, growth rate and p-type doping of the In P epitaxial layer The properties of the In Ga As P epitaxial materials are studied.The results show that the growth temperature has a great effect on the adsorption coefficient of family atoms in a certain temperature range, and the lattice matched In0.56Ga0 is obtained. 4 4 As0 .94 P0 .0 6 material, the low temperature photoluminescence peak is located at 1 50 7nm, and the FWHM is 9.8meV.