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研究了耿二极管在加速老化实验中的退化。制备了具有银热沉(代替通常的铜热沉)的耿二极管以减少接触退化。认为射频功率随低场电阻增加而降低是最主要的退化模式。用磁阻测量法获得砷化镓本体老化性能的数据。以里德位错受主理论为基础分析了载流子浓度和迁移率的变化。用在砷化镓有源层里产生位错而导致载流子移动的观点来定量地解释射频功率降低的原因。
Degradation of Geng diodes in accelerated aging experiments was studied. Gaseous diodes with silver heat sinks (instead of usual copper heat sinks) were prepared to reduce contact degradation. It is considered that RF power is the most important degradation mode with the increase of low field resistance. Magnetoresistive measurement of gallium arsenide body aging properties of the data. Based on Reed's theory of dislocation acceptors, the changes of carrier concentration and mobility are analyzed. The reason for the decrease of radio frequency power is explained quantitatively from the viewpoint of generating carrier movement caused by dislocation in the gallium arsenide active layer.