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采用反应热蒸发的方法,在聚对苯二甲酸乙二醇酯(PET)塑料衬底上制备In2O3:Sn(ITO)薄膜。鉴于塑料对温度的敏感性,详细研究了衬底温度对其上沉积的ITO薄膜的微观结构及光电性能的影响,在低温条件下(Ts=140℃)获得电阻率为7.52×10-4Ωcm,可见光范围内的透过率大于80%和结构特性良好的薄膜,并将其应用于PIN型太阳电池的前电极,获得了转换效率为4.41%的柔性非晶硅(a-Si)薄膜太阳电池。
An In2O3: Sn (ITO) thin film was prepared on a polyethylene terephthalate (PET) plastic substrate by a reactive thermal evaporation method. In view of the sensitivity of plastic to temperature, the effects of substrate temperature on the microstructure and photoelectric properties of ITO thin film deposited on it were investigated in detail. The resistivity of 7.52 × 10-4Ωcm was obtained at low temperature (Ts = 140 ℃) The visible light transmittance of more than 80% and good structural properties of the film, and apply it to the PIN-type solar cell front electrode to obtain a conversion efficiency of 4.41% of the flexible amorphous silicon (a-Si) thin-film solar cells .