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综述了近年来微波ＧａＡｓＭＥＳＦＥＴ可靠性的研究进展。重点介绍了影响其可靠性的因素如栅肖特基结和源／漏欧姆结的相互扩散及表面效应等。
The research progress of microwave GaAsMESFET reliability is reviewed. The factors that affect their reliability, such as the interdiffusion of gate-Schottky junction and the source / drain ohmic junction and the surface effect, are highlighted.