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利用有限元软件ANSYS,对碳纳米管的最佳阵列密度进行了分析。针对碳纳米管阵列静电场分布的特点,建立了碳纳米管的模型,确定了模型的边界条件。为了便于对计算结果进行对照,在分析时采用的参数是:阵列周期T=2000nm,单根碳纳米管长度L=1μm,顶端半径r=2nm。通过计算得到了单根碳纳米管的场增强因子为321。在长度L和顶端半径r不变的情况下,使用了参数化设计语言,计算了在不同周期(200～4000μm)下碳纳米管场增强因子随周期变化的情况,进一步利用Fowler Nordheim函数得到最佳阵列周期(1600μm)。结果证明,利用有限元软件,其分析过程不仅正确性,而且实用,并且为此类问题的解决提供了一个通用的方法。
The optimal array density of carbon nanotubes was analyzed by finite element software ANSYS. According to the characteristics of the electrostatic field distribution of the carbon nanotube array, a model of the carbon nanotube is established and the boundary conditions of the model are determined. In order to facilitate comparison of the calculation results, the parameters used in the analysis are: array period T = 2000 nm, length of single carbon nanotube L = 1 μm, tip radius r = 2 nm. The calculated field enhancement factor of a single carbon nanotube is 321. In the case of constant length L and tip radius r, parametric design language is used to calculate the field enhancement factor of carbon nanotubes with periodicity in different periods (200 ~ 4000μm), and further use the Fowler Nordheim function Good array period (1600μm). The results show that the use of finite element software, the analysis process is not only correct, but also practical, and to solve such problems provide a common method.