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用溶剂熔区移动法制备了掺In的Cd0.9Zn0.1Te晶体,晶体生长温度800℃,温度梯度为20℃/cm,生长速度0.4 mm/h。测试了晶体的Te夹杂情况、红外透过率图谱、I~V特性曲线和PICTS特性,并以1115℃下用VB法生长的掺In的Cd0.9Zn0.1Te晶体做为参照,对比了两者性能。结果表明,溶剂熔区移动法制备的晶体Te夹杂的密度和体积百分比比VB法晶片低,但是Te夹杂的尺寸要比VB法晶体大;溶剂熔区移动法晶体的红外透过率比VB法晶体高;溶剂熔区移动法晶体电阻率比VB法晶体高了一个数量级;PICTS测试发现,溶剂熔区移动法晶体内主要的缺陷密度低于VB法晶体。
In addition, Cd doped Cd0.9Zn0.1Te crystals were prepared by solvent melt migration method. The crystal growth temperature was 800 ℃, the temperature gradient was 20 ℃ / cm and the growth rate was 0.4 mm / h. The Te inclusions, infrared transmittance spectra, I ~ V characteristic curves and PICTS characteristics of the crystals were tested. The doped Cd0.9Zn0.1Te crystals grown by VB method at 1115 ℃ were used as a reference, performance. The results show that the density and volume percentage of crystal Te doped by the solvent-melting zone method are lower than that of the VB method, but the size of the Te inclusion is larger than that of the VB method. The infrared transmission rate of the crystal is higher than that of the VB method The crystal resistivity of the solvent fusion zone moving method is one order of magnitude higher than that of the VB method. The PICTS test shows that the main defect density in the melt of the solvent melting zone is lower than that of the VB method.