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二氧化锡(SnO_2)薄膜是具有宽光学带隙的 N 型半导体薄膜,在可见光范围内具有很高的透过率,是非晶硅太阳电池理想的透明导电抗反射膜。我校物理系半导体研究室采用常压 CVD 技术,研制成功的这种小面积掺氟绒面 SnO_2透明导电膜,主要技术参数为:电阻率7×10~(-4)Ω·cm,总透过率硅≥90%。南开大学用这种 SnO_2膜研制出了面积为12.6nm~2、转换效率为7.2%的非晶硅太阳能电池。此结果与使用日本的某些
SnO2 thin film is an N-type semiconductor thin film with a wide optical bandgap and has a high transmittance in the visible light range. It is an ideal transparent conductive anti-reflection film for amorphous silicon solar cells. The Department of Physics, Department of Physics semiconductor laboratory using atmospheric pressure CVD technology, the successful development of such a small area doped fluorine suede SnO_2 transparent conductive film, the main technical parameters: the resistivity of 7 × 10 ~ (-4) Ω · cm, total penetration Rate of silicon ≥ 90%. Nankai University with this SnO 2 film developed an area of 12.6nm ~ 2, the conversion efficiency of 7.2% amorphous silicon solar cells. This result is associated with the use of some of Japan