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报导了一种108型运算放大器制备过程的分析和工艺研究。从该放大器总剂量辐照特性分析指出,改进大量生产器件的标准工艺,可以提高它们的抗总剂量能力。从损伤机理分析表明,运算放大器临界的损伤模型主要是由于超β晶体管增益的衰减和漏电流的增加。选择了基本制备工序用MOS 电容的方法分析工艺流程,随后,研究了108型运算放大器抗辐照特性的专门工艺步骤。估价了放大器,晶体管试验器件和MOS 电容的抗辐照能力。而重点被放在后工艺上。应用规定的工艺能够制备抗辐照的运算放大器,而在10~(?)拉德(硅)的剂量下衰减很小。对于加固器件,可以放宽原108型器件的一些参数特性。
Reported a 108 op amp preparation process analysis and process research. Analysis of the total dose irradiance from this amplifier indicates that standard techniques for improving mass-produced devices can increase their resistance to total dose capability. From the damage mechanism analysis, it is shown that the critical damage model of the op amp is mainly due to the attenuation of the gain of the super-β transistor and the increase of the leakage current. The basic preparation process was chosen to analyze the process flow with the MOS capacitor. Subsequently, the special process steps for the radiation resistance of the 108 type operational amplifier were studied. Assess the anti-radiation capability of amplifiers, transistor test devices, and MOS capacitors. The focus is on the post-process. The prescribed process can be used to prepare anti-radiation op amps with very little attenuation at 10 ~ (R) D (silicon) dose. For the reinforcement device, you can relax some of the parameters of the original 108 device features.