SiCp/Cu composites with a compact microstructure were successfully fabricated by vacuum hot-pressing method. In order to suppress the detrimental interfacial reactions and ameliorate the interfacial bonding between copper and silicon carbide, molybdenum coating was deposited on the surface of silicon carbide by magnetron sputtering method and crystallized heat-treatment. The effects of the interfacial design on the thermo-physical properties of Si Cp/Cu composites were studied in detail. Thermal conductivity and expansion test results showed that silicon carbide particles coated with uniform and compact molybdenum coating have improved the comprehensive thermal properties of the Si Cp/Cu composites. Furthermore, the adhesion of the interface between silicon carbide and copper was significantly strengthened after molybdenum coating. Si Cp/Cu composites with a maximum thermal conductivity of 274.056 W/(m·K) and a coefficient of thermal expansion of 9 ppm/K were successfully prepared when the volume of silicon carbide was about 50%, and these Si Cp/Cu composites have potential applications for the electronic packageing of the high integration electronic devices. SiCp / Cu composites with a compact microstructure were successfully fabricated by vacuum hot-pressing method. In order to suppress the detrimental interfacial reactions and ameliorate the interfacial bonding between copper and silicon carbide, molybdenum coating was deposited on the surface of silicon carbide by magnetron sputtering method and crystallized heat-treatment. The effects of the interfacial design on the thermo-physical properties of Si Cp / Cu composites were studied in detail. Thermal conductivity and expansion test results showed that silicon carbide particles coated with uniform and compact molybdenum coating have been improved the integrated thermal properties of the Si Cp / Cu composites. The adhesion of the interface between silicon carbide and copper was significantly strengthened after molybdenum coating. Si Cp / Cu composites with a maximum thermal conductivity of 274.056 W / (m · K) and a coefficient of thermal expansion of 9 ppm / K were successfully prepared whe n the volume of silicon carbide was about 50%, and these Si Cp / Cu composites have potential applications for the electronic packageing of the high integration electronic devices.