为满足大容量,长距离光纤通信和其它快速微弱光信号的探测,我们采用化学腐蚀和表面钝化技术,研制成功了具有近乎直台角的N~+PP~+硅雪崩光电二极管(MAPD).该器件具有工艺简单,成本低,响应速度快等优点.并且有长期工作的稳定性.文中详细地讨论了器件结构的设计,并概述了制造方法和光电特性. In order to meet the needs of high-capacity, long-distance optical fiber communication and other fast and weak optical signals, we have successfully developed the N ~ + PP ~ + silicon avalanche photodiode (MAPD) ​​with nearly straight angle by using chemical etching and surface passivation technology. The device has the advantages of simple process, low cost and fast response, and has the stability of long-term work.The article discusses the device structure design in detail and outlines the manufacturing method and the photoelectric property.