本霍耳元件用化合物半导体异质结作为磁敏感部件。磁敏感部件上复盖了一层绝缘钝化膜。钝化膜的热膨胀系数与半导体层的热膨胀系数几乎相同。该钝化膜形成一个表面不是平坦的而是斜的多层结构。这种霍耳元件的优点是,电子迁移率和灵敏 The Hall element uses a compound semiconductor heterojunction as a magnetically sensitive element. Magnetic sensitive components covered with a layer of insulating passivation film. The thermal expansion coefficient of the passivation film is almost the same as the thermal expansion coefficient of the semiconductor layer. The passivation film forms a multilayered structure whose surface is not flat but oblique. The advantages of this Hall element are electron mobility and sensitivity