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在镜面抛光硅衬底上加负偏压，利用微波等离子体化学气相沉积方法生长金刚石薄膜．通过改变偏压成核阶段的不同条件制备出一系列样品，与直接在镜面抛光硅衬底上不加偏压直接生长的金刚石膜相比，成核密度明显提高，可达4×109cm－2。
A negative bias voltage is applied to the mirror-polished silicon substrate, and the diamond film is grown by a microwave plasma chemical vapor deposition method. A series of samples were prepared by changing the different conditions of the nucleation stage. Compared with the diamond films grown directly on the mirror-polished silicon substrate without any bias, the nucleation density obviously increased up to 4 × 109cm-2 .