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用抗辐照体硅栅CMOS电路设计成微处理机系列。系列的三个主要产品是英特尔NMOS器件的逻辑模拟:SA3000-通用8位中央处理机(CPU)(Intel 8085A);SA3001-具有两个8位I/O接口,一个6位I/O接口和一个计时器(Intel 8155/56)的256×8位静态RAM;SA3002-有两个8位I/O接口(Intel 8355)的2×8位ROM。本文叙述实现全静、全补偿CMOS器件的设计原理及方法学,其结果能经受1兆拉德以上的辐照总剂量。这些设计是无闩锁的,采用3微米栅长工艺制作在外延衬底上。为了达到这一水平的辐照容限,必须测量该工艺的辐照特性,并且整个设计都应适应辐照效应。
With anti-radiation body Si gate CMOS circuit design into a series of microprocessors. The three main products in the family are logic simulations of Intel’s NMOS devices: the SA3000 - a general purpose 8-bit central processing unit (CPU) (Intel 8085A); the SA3001 - has two 8-bit I / O interfaces, one 6-bit I / 256 x 8-bit static RAM with one timer (Intel 8155/56); SA3002 - 2 x 8-bit ROM with two 8-bit I / O interfaces (Intel 8355). This article describes the design principles and methodology of a fully quiet, fully compensated CMOS device that can withstand a total dose of radiation above 1 Mrad. These designs are latch-free and are fabricated on epitaxial substrates using a 3-micron gate-length process. In order to achieve this level of radiation tolerance, the process must measure the irradiance characteristics, and the entire design should be adapted to the effects of radiation.