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用MOCVD方法生长了3种InGaAs/Al0.2Ga0.8As应变多量子阱(MQWs)样品,用于研究在气相中TMIn的含量对MQWs的发光波长和半峰宽(FWHM)以及在X射线中零级峰位的影响。研究表明,随着In组分在MQW中的增加,MQWs中应变也随之增加,这是造成FWHM增大的原因。同时也研究了应变MQWs中In组分与气相中TMIn含量的关系,为准确设计和控制MQWs的组分提供了依据。
Three samples of InGaAs / Al0.2Ga0.8As strain MQWs grown by MOCVD were used to investigate the effect of the TMIn content in the gas phase on the emission wavelength and full width at half maximum (FWHM) of MQWs and zero Level peak effect. The results show that with the increase of In composition in MQW, the strain in MQWs also increases, which is the reason for the increase of FWHM. At the same time, the relationship between In composition and TMIn content in the gas phase was also studied. It provides a basis for accurately designing and controlling the composition of MQWs.