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This paper reports on a successful demonstration of poly-Si TFT nonvolatile memory with a much reduced thermal-budget.The TFT uses uniform Si quantum-dots(size ~10 nm and density ~10~(11) cm~(-2)) as storage media,obtained via LPCVD by flashing SiH_4/H_2 at 580℃for 15 s on a Si_3N_4 surface.The poly-Si grain-enlargement step was shifted after source/drain formation.The NiSi_x-silicided source/drain enables a fast lateral-recrystallization,and thus grain-enlargement can be accomplished by a much reduced thermal-cycle(i.e., 550℃/4 h).The excellent memory characteristics suggest that the proposed poly-Si TFT Si quantum-dot memory and associated processes are promising for use in wider TFT applications,such as system-on-glass.
This paper reports on a successful demonstration of poly-Si TFT nonvolatile memory with a much reduced thermal-budget. The TFT uses uniform Si quantum-dots (size ~ 10 nm and density ~ 10 ~ (11) cm -2) as storage media, obtained via LPCVD by flashing SiH_4 / H_2 at 580 ° C for 15 s on a Si_3N_4 surface. The poly-Si grain-enlargement step was shifted after source / drain formation. NiSi_x-silicided source / The excellent memory characteristics suggest that the proposed poly-Si TFT Si quantum-dot memory and associated processes are promising for use in wider TFT applications, such as system-on-glass.