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对在GaAs (0 0 1)衬底上用金属有机物气相外延 (MOVPE)方法生长的GaN薄膜的湿法腐蚀特性进行了研究 .所用腐蚀液包括HCl、H3PO4 、KOH水溶液以及熔融KOH ,腐蚀温度为 90～ 30 0℃ .实验发现不同的腐蚀液在样品表面腐蚀出不同形状的腐蚀坑 .KOH溶液腐蚀出长方形的坑 ,长边平行于 (111)A面 ,表明沿相互垂直的〈110〉晶向的腐蚀特性不同 .用不同晶面相对反应性的差别定性解释了腐蚀的这种非对称性 .此外 ,还发现KOH水溶液更有可能用于显示立方相GaN外延层中的层错 .
The wet etching properties of GaN films grown on metal-organic-organic-vapor-phase epitaxy (MOVPE) on GaAs (0 0 1) substrates were studied.The etching solutions used include HCl, H3PO4, aqueous KOH and molten KOH 90 ~ 300 ℃ .The results show that different etching solutions corrode the corrosion pits with different shapes on the sample surface.The KOH solution corrodes the rectangular pits and the long sides are parallel to the (111) A plane, indicating that along the mutually perpendicular <110> The corrosion characteristics are different, and the asymmetry of corrosion is qualitatively explained by the difference of the relative reactivity of different crystal planes.In addition, it is found that KOH aqueous solution is more likely to be used to reveal the stacking fault in the cubic GaN epitaxial layer.