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用RF溅射制备厚度为200nm的Fe-N薄膜在250℃,12000A/m磁场下真空热处理后,当N含量在5%~7%(原子百分数)范围内形成a′+a″相时,4πMs可达2.4T,Hc<80A/m,2~10MHz下高频相对导磁率μr=1500,可满足针对10Gb/in2存储密度的GMR/感应式复合读写磁头中写入磁头的需要.Fe-N系薄膜中a′相的形成机理和点阵常数与块状试样按Bain机理形成的a′相有明显的差别,得到了薄膜中a′相的a,c与C_N~a′之间的线性关系式.
Preparation of an Fe-N thin film with a thickness of 200 nm by RF sputtering After a vacuum heat treatment at a temperature of 250 ° C and a magnetic field of 12,000 A / m, an a ’+ a "phase is formed in the range of 5% to 7% by atomic percent, 4πMs up to 2.4T, Hc <80A / m, high frequency relative permeability μr = 1500 at 2 ~ 10MHz, which can meet the need of write heads in GMR / inductive hybrid read / write heads for 10Gb / The formation mechanism and the lattice constant of the a phase in -N films are obviously different from the a ’phase formed by the Bain mechanism in bulk samples. The a, c and C_N ~ a’ The linear relationship between.