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随着高速毫微秒脉冲技术的迅速发展,原有的电真空器件由于体积大、功耗大、寿命短、可靠性差等缺点,已不能适应当前高速毫微秒脉冲技术发展的需要。整机单位迫切要求实现高压高速脉冲源的固体化、小型化。这就推动了高压大电流高速半导体功率器件的发展。经过多年的努力,取得了很大进展,并已成为当前大功率半导体器件发展的一个引人注目的研究方向。 目前大力推广应用的器件主要有垂直沟道硅MOS场效应管,而高压垂直沟道结栅场效应晶体管的开发研制则近几年才开始。由于结栅场效应管是一种耗尽型器件,极间电容小,器件的开关速度优于MOS器件。在需要产生极窄宽度的高压脉冲场合下,垂直沟道结栅高压场效应晶体管是理想的固体器件。其优越的开关性能、温度特性不是双极型或MOS器件可以轻易取代的。
With the rapid development of high-speed nanosecond pulse technology, the original electric vacuum devices have not been able to meet the current development needs of high-speed nanosecond pulse technology due to their large size, high power consumption, short service life and poor reliability. The whole unit urgently needs to realize the solidification and miniaturization of the high-pressure high-speed pulse source. This has promoted the development of high-voltage high-current high-speed semiconductor power devices. After years of hard work, great progress has been made and it has become an attractive research direction for the development of high-power semiconductor devices. At present, there are mainly vertical-channel silicon MOS field-effect transistors, and the development of high-voltage vertical channel junction field-effect transistors has only started in recent years. As the junction gate FET is a depletion-type device, the very small capacitance, the device switching speed than MOS devices. Vertical trench junction gate high voltage field effect transistors are ideal solid state devices for applications where high voltage pulses of very narrow width are required. Its superior switching performance, temperature characteristics are not bipolar or MOS devices can be easily replaced.