基于4H-SiC的材料特性,对具有双外延基区结构的4H-SiC双极晶体管进行研究.通过分析该结构在基区内部形成的自建电场以及基区渡越时间,利用正交试验的方法,基于各种器件二维模型,对该器件结构进行数值计算,并进行平均极差分析.计算结果表明,该器件的共发射结电流增益最高可达72,具有负温度系数,并且在一个很宽的集电极电流范围内该特性保持不变. Based on the material properties of 4H-SiC, the 4H-SiC bipolar transistor with double epitaxial base structure was studied. By analyzing the self-built electric field and base transit time of the structure formed in the base region, Method based on the two-dimensional model of a variety of devices, the device structure of the numerical calculation, and the average range of analysis. The calculated results show that the device’s common emitter junction current gain up to 72, with a negative temperature coefficient, and in a This feature remains constant over a wide collector current range.