Effect of a polarized P(VDF-TrFE)ferroelectric polymer gating on AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors(MOS-HEMTs)was investigated(Figure 1).The P(VDF-TrFE)gating in the source/drain access regions of AlGaN/GaN MOS-HEMTs was positively polarized(i.e.,partially positively charged hydrogen were aligned to the AlGaN surface)by an applied electric field,resulting in a shift-down of the conduction band at the AlGaN/GaN interface.This increases the 2-dimensional electron gas(2-DEG)density in the source/drain access region of the AlGaN/GaN heterostructure,and thereby reduces the source/drain series resistance(Figure 2).Detailed material and electrical characterization of the P(VDF-TrFE)ferroelectric film was also carried out using the atomic force microscopy(AFM),X-ray Diffraction(XRD),and ferroelectric hysteresis loop measurement(Figure 3).