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[期刊论文] 作者：MA KaiSheng,CUI XiaoXin,LIAO Kai,LIAO Nan,WU Di,YU DunShan,,
来源：Science China(Information Sciences) 年份：2015
Due to its excellent device features, manufacture process compatibility and diversity of the circuit structures, The Fin FET is considered appropriate candidate...
[期刊论文] 作者：LIAO Nan,CUI XiaoXin,LIAO Kai,MA KaiSheng,WU Di,WEI Wei,LI Rui,YU DunShan,,
来源：Science China(Information Sciences) 年份：2014
With the aggressive scaling of device technology,the leakage power has become the main part of power consumption,which seriously reduces the energy recovery efc...
Ultra-low power dissipation of improved complementary pass-transistor adiabatic logic circuits based
[期刊论文] 作者：LIAO Kai,CUI XiaoXin,LIAO Nan,MA KaiSheng,WU Di,WEI Wei,LI Rui,YU DunShan,,
来源：Science China(Information Sciences) 年份：2014
With the technology scaling down,low power dissipation has become one of the research focuses in the field of integrated circuit design.Various types of adiabat...
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