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铁电/介电BST(B axS r1-xT iO3)薄膜在微电子学、集成光学和光电子学等新技术领域有广泛的应用前景。用射频磁控溅射方法制备了厚约700 nm的B a0.5S r0.5T iO3薄膜,采用A l/BST/ITO结构研究了溅射功率、溅射气压、O2/(A r+O2)比和基片温度对上述BST薄膜沉积速率和介电性能的影响,并根据这些结果分析了较优的工艺条件,同时用XRD、XPS和SEM研究了薄膜的晶相、组成和显微结构。
Ferroelectric / Dielectric BST (BaxS r1-xT iO3) thin films have broad applications in new technologies such as microelectronics, integrated optics and optoelectronics. The B a0.5S r0.5T iO3 thin film with a thickness of 700 nm was prepared by RF magnetron sputtering. The sputtering power, sputtering pressure, O2 / (A r + O2) The effects of temperature and substrate temperature on the deposition rate and dielectric properties of the above BST thin films were investigated. The optimum technological conditions were also analyzed based on these results. The crystal phases, composition and microstructure of the films were also studied by XRD, XPS and SEM.