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Nitronex公司与航空电子产品制造商Rockwell Collins合作演示了一个120W破记录输出功率的GaN晶体管。该公司制作的这个GaN HEMT器件采用了其基线工艺,器件用于第3代w-CDMA市场,其封装和测试由Rockwell Colling公司负责。在2GHz和28V时,对39mm栅宽的这种器件进行了脉冲测试。当压缩2dB时,器件的增益为11.3dB,效率大于39%。上述结果表明,GaN材料能够在未来RF功率放大器系统中发挥巨大的作用。 Rockwell Collins先进技术中心指出,上述器件特别适用于美国政府的系统计划,如数据链16计划、武器数据链、联合战术无线电系统和飞行导航系统,对这些系统而言,高性能的GaN RF器件是必不可少的。
Nitronex teamed up with avionics maker Rockwell Collins to demonstrate a 120-W record-output GaN transistor. The company’s GaN HEMT device uses its baseline technology, the device used in the third generation w-CDMA market, the packaging and testing by Rockwell Colling company responsible. At 2GHz and 28V, this device has a pulse width of 39mm. When compressed 2dB, the gain of the device is 11.3dB, the efficiency is greater than 39%. The above results show that GaN materials can play a huge role in future RF power amplifier systems. The Rockwell Collins Advanced Technology Center notes that the devices described above are well suited for U.S. government system initiatives such as the Data Link 16 Program, the Weapon Data Link, the Joint Tactical Radio System and the Flight Navigation System for which high performance GaN RF devices are necessary.