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对模数转换器中的传统开关电路的导通电阻进行了详细的理论分析,提出了一种互补型栅压自举开关电路。该电路结构相比于传统开关,通过少量的功耗代价换取了更优的频域性能,在不同工艺角下具有更好的鲁棒性,适用于先进工艺下的低电压工作环境。互补型栅压自举开关电路采用28 nm工艺设计,在1 V的电源电压下,对800 f F的负载电容进行速率为800 MS/s的采样,在低频输入下(181.25 MHz)实现的无杂散动态范围(SFDR)为89 d B,四倍奈奎斯特输入频率下(1 556 MHz)实现的SFDR为65 d B,开关电路面积为80μm×20μm。
Conducting a detailed theoretical analysis of the on-resistance of the traditional switch circuit in the analog-to-digital converter, a complementary gate voltage bootstrap circuit is proposed. Compared with the traditional switch, the circuit structure can obtain better frequency domain performance with a small amount of power consumption cost and has better robustness under different process angles, and is suitable for a low-voltage working environment under advanced technology. Complementary gate-voltage bootstrap circuitry designed in a 28-nm process at a 800 f F load capacitance at 800 MS / s at a supply voltage of 1 V and at low frequency input (181.25 MHz) The spurious dynamic range (SFDR) is 89 dB, the SFDR achieved at four Nyquist input frequencies (1 556 MHz) is 65 dB, and the switching circuit area is 80 μm × 20 μm.