过去三十年来,直拉法和悬浮区熔法一直支配着硅材料的生产,因为悬浮区熔并不与任何物质接触(生长室的气氛除外),因此比直拉锭条更纯。此法的另一个优点是在生长的晶体部分有较高的热梯度,因此对于给定的晶体直径,其生产速率可能是直拉生长的两倍。两法的结晶完整性相同,都有利于无位错生长。虽然悬浮区熔硅的生产成本,可能与直拉锭条相同,且沾污又少,但它的产量却只占半导体硅总产量的大约1/10,并且几乎完全把应用局限在分立器件领域,特别是大功率器件方面。造成 For the past three decades, Czochralski and suspension zone melting have dominated the production of silicon materials because the suspension zone melts without any contact with the material (except in the growth chamber atmosphere) and is therefore purer than the Czochralski bar. Another advantage of this method is the higher thermal gradient in the growing crystal portion, so the production rate for a given crystal diameter may be double the Czochralski growth. The same crystallinity of the two laws are conducive to growth without dislocation. Although the cost of producing floating-zone silicon may be the same as that of a Czochralski bar with less contamination, its yield is only about 1/10 of the total production of semiconductor silicon and is almost entirely confined to discrete devices , Especially in high-power devices. Cause