Pure and rare earth doped gadolinium oxide (Gd 2O 3) waveguide films were prepared by a simple sol-gel process and dip-coating method. Structure of Gd 2O 3 films annealed at different temperature was investigated by X-ray diffraction and transmission electron microscopy. Oriented growth of (400) face of Gd 2O 3 has been observed when the films were deposited on amorphous substrate. The refractive index and thickness of films were determined by m-lines spectroscopy. The laser beam (λ=632.8 nm) was coupled into the film by a prism coupler and the propagation length is about 3.5 cm. Luminescence properties of europium ions doped films were measured by waveguide fluorescence spectroscopy, which shows disordered environment for Eu 3+ at 400 ℃. Pure and rare earth doped gadolinium oxide (Gd 2 O 3) waveguide films were prepared by a simple sol-gel process and dip-coating method. Structure of Gd 2 O 3 films annealed at different temperature was investigated by X-ray diffraction and transmission electron microscopy Oriented growth of (400) face of Gd 2O 3 has been observed when the films were deposited on amorphous substrate. The refractive index and thickness of films were determined by m-line spectroscopy. The laser beam (λ = 632.8 nm) was coupled into the film by a prism coupler and the propagation length is about 3.5 cm. Luminescence properties of europium ions doped films were measured by waveguide fluorescence spectroscopy, which shows disordered environment for Eu 3+ at 400 ° C.