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Fundamentals of the Schottky contacts and the high-temperature current conduction through three kinds of Schottky diodes are studied.N-Si Schottky diodes,GaN Schottky diodes and AlGaN/GaN Schottky diodes are investigated by I–V –T measurements ranging from 300 to 523 K.For these Schottky diodes,a rise in temperature is accompanied with an increase in barrier height and a reduction in ideality factor.Mechanisms are suggested,including thermionic emission,field emission,trap-assisted tunnelling and so on.The most remarkable finding in the present paper is that these three kinds of Schottky diodes are revealed to have different behaviours of high-temperature reverse currents.For the n-Si Schottky diode,a rise in temperature is accompanied by an increase in reverse current.The reverse current of the GaN Schottky diode decreases first and then increases with rising temperature.The AlGaN/GaN Schottky diode has a trend opposite to that of the GaN Schottky diode,and the dominant mechanisms are the effects of the piezoelectric polarization field and variation of two-dimensional electron gas charge density.
Fundamentals of the Schottky contacts and the high-temperature current conduction through three kinds of Schottky diodes are studied. N- Si Schottky diodes, GaN Schottky diodes and AlGaN / GaN Schottky diodes are investigated by I-V -T measurements ranging from 300 to 523 K.For these Schottky diodes, a rise in temperature is accompanied with an increase in barrier height and a reduction in ideality factor. Mechanisms are suggested, including thermionic emission, field emission, trap-assisted tunneling and so on. The most remarkable finding in the present paper is that these three kinds of Schottky diodes are revealed to have different behaviors of high-temperature reverse currents. For the n-Si Schottky diode, a rise in temperature is accompanied by an increase in reverse current. GaN Schottky diode decreases first and then increases with rising temperature. The AlGaN / GaN Schottky diode has a trend opposite to that of the GaN Schottky diode, and the dominant mechanisms are the effects of the piezoelectric polarization field and variation of two-dimensional electron gas charge density.